2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Microsemi Corporation | MOSFET N-CH 1000V 10.5A TO247AD | TO-247-3 | POWER MOS IV® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247AD | N-Channel | 1000V | 2950pF @ 25V | 310W (Tc) | 10.5A (Tc) | 10V | 1.1 Ohm @ 5.25A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 10.5A TO247AD | TO-247-3 | POWER MOS IV® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247AD | N-Channel | 1000V | 2950pF @ 25V | 310W (Tc) | 10.5A (Tc) | 10V | 1.1 Ohm @ 5.25A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | - |