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- Input Capacitance (Ciss) (Max) @ Vds :
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17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET P-CHANNEL 12V 8A 6TSOP | 4-UFBGA | TrenchFET® Gen III | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4-MICRO FOOT® (1.6x1.6) | P-Channel | 20V | 2500pF @ 10V | 2.8W (Tc) | 9.7A (Tc) | 1.8V, 4.5V | 21 mOhm @ 3A, 4.5V | 900mV @ 250µA | 47nC @ 4.5V | ±8V | - | |||||
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Infineon Technologies | MOSFET N-CH 25V 27A DIRECTFET | DirectFET™ Isometric MX | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MX | N-Channel | 25V | 3770pF @ 15V | 2.8W (Ta), 96W (Tc) | 27A (Ta), 160A (Tc) | 4.5V, 10V | 2.5 mOhm @ 27A, 10V | 2.35V @ 100µA | 47nC @ 4.5V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 16A DIRECTFET | DirectFET™ Isometric MX | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MX | N-Channel | 25V | 3770pF @ 15V | 2.8W (Ta), 96W (Tc) | 27A (Ta), 160A (Tc) | 4.5V, 10V | 2.5 mOhm @ 27A, 10V | 2.35V @ 100µA | 47nC @ 4.5V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 55V 33A TO220FP | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Discontinued at Digi-Key | D2PAK | N-Channel | 30V | 4170pF @ 15V | 140W (Tc) | 150A (Tc) | 4.5V, 10V | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 40V 14A 8-SOIC | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | N-Channel | 30V | 4170pF @ 15V | 140W (Tc) | 150A (Tc) | 4.5V, 10V | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 30V 86A DPAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | N-Channel | 30V | 4170pF @ 15V | 140W (Tc) | 150A (Tc) | 4.5V, 10V | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET P-CH 20V 7A 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-TSSOP | P-Channel | 20V | 2361pF @ 15V | 1.5W (Ta) | 7A (Ta) | 2.5V, 4.5V | 22 mOhm @ 7A, 4.5V | 1.2V @ 250µA | 47nC @ 4.5V | ±12V | - | |||||
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Infineon Technologies | MOSFET P-CH 20V 7A 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-TSSOP | P-Channel | 20V | 2361pF @ 15V | 1.5W (Ta) | 7A (Ta) | 2.5V, 4.5V | 22 mOhm @ 7A, 4.5V | 1.2V @ 250µA | 47nC @ 4.5V | ±12V | - | ||||
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Infineon Technologies | MOSFET N-CH 30V 150A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | N-Channel | 30V | 4170pF @ 15V | 140W (Tc) | 150A (Tc) | 4.5V, 10V | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 30V 150A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | N-Channel | 30V | 4170pF @ 15V | 140W (Tc) | 150A (Tc) | 4.5V, 10V | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | ±20V | - | |||||
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Alpha Omega Semiconductor Inc. | MOSFET P-CH 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOIC | P-Channel | 12V | 4750pF @ 6V | 3W (Ta) | 11A (Ta) | 1.8V, 4.5V | 16 mOhm @ 11A, 4.5V | 1V @ 250µA | 47nC @ 4.5V | ±8V | - | |||||
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Infineon Technologies | MOSFET P-CH 20V 7A 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-TSSOP | P-Channel | 20V | 2361pF @ 15V | 1.5W (Ta) | 7A (Ta) | 2.5V, 4.5V | 22 mOhm @ 7A, 4.5V | 1.2V @ 250µA | 47nC @ 4.5V | ±12V | - | |||||
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Alpha Omega Semiconductor Inc. | MOSFET P-CH 12V 11A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SOIC | P-Channel | 12V | 4750pF @ 6V | 3W (Ta) | 11A (Ta) | 1.8V, 4.5V | 16 mOhm @ 11A, 4.5V | 1V @ 250µA | 47nC @ 4.5V | ±8V | - | |||||
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Infineon Technologies | MOSFET N-CH 25V 27A DIRECTFET | DirectFET™ Isometric MX | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MX | N-Channel | 25V | 3770pF @ 15V | 2.8W (Ta), 96W (Tc) | 27A (Ta), 160A (Tc) | 4.5V, 10V | 2.5 mOhm @ 27A, 10V | 2.35V @ 100µA | 47nC @ 4.5V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 25V 27A DIRECTFET | DirectFET™ Isometric MX | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MX | N-Channel | 25V | 3770pF @ 15V | 2.8W (Ta), 96W (Tc) | 27A (Ta), 160A (Tc) | 4.5V, 10V | 2.5 mOhm @ 27A, 10V | 2.35V @ 100µA | 47nC @ 4.5V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 150A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | N-Channel | 30V | 4170pF @ 15V | 140W (Tc) | 150A (Tc) | 4.5V, 10V | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 30V 150A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | N-Channel | 30V | 4170pF @ 15V | 140W (Tc) | 150A (Tc) | 4.5V, 10V | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | ±20V | - |