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3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
TLE2A0565G
RFQ
Infineon Technologies MOSFET N-CH 40V 14A 8-SOIC TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 N-Channel 30V 4170pF @ 15V 140W (Tc) 150A (Tc) 4.5V, 10V 3.8 mOhm @ 38A, 10V 2.3V @ 250µA 47nC @ 4.5V ±20V -
IDW75E60  D75E60
Per Unit
$1.7400
RFQ
Infineon Technologies MOSFET N-CH 30V 150A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB N-Channel 30V 4170pF @ 15V 140W (Tc) 150A (Tc) 4.5V, 10V 3.8 mOhm @ 38A, 10V 2.3V @ 250µA 47nC @ 4.5V ±20V -
IRL7833LPBF
RFQ
Infineon Technologies MOSFET N-CH 30V 150A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 N-Channel 30V 4170pF @ 15V 140W (Tc) 150A (Tc) 4.5V, 10V 3.8 mOhm @ 38A, 10V 2.3V @ 250µA 47nC @ 4.5V ±20V -
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