- Manufacture :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Gate Charge (Qg) (Max) @ Vgs :
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30 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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GeneSiC Semiconductor | TRANS SJT 1700V 4A TO-247AB | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | Tube | SiC (Silicon Carbide Junction Transistor) | Surface Mount | 175°C (TJ) | Active | D2PAK (7-Lead) | - | 1200V | 1403pF @ 800V | 170W (Tc) | 25A (Tc) | - | 100 mOhm @ 10A | - | - | - | - | ||||
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GeneSiC Semiconductor | TRANS SJT 1200V 25A | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | Tube | SiC (Silicon Carbide Junction Transistor) | Surface Mount | 175°C (TJ) | Active | D2PAK (7-Lead) | - | 1200V | 3091pF @ 800V | 282W (Tc) | 45A (Tc) | - | 60 mOhm @ 20A | - | - | - | - | ||||
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GeneSiC Semiconductor | TRANS SJT 1700V 8A TO-247AB | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | Tube | SiC (Silicon Carbide Junction Transistor) | Surface Mount | 175°C (TJ) | Active | D2PAK (7-Lead) | - | 1200V | - | 106W (Tc) | 15A (Tc) | - | - | - | - | - | - | ||||
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GeneSiC Semiconductor | TRANS SJT 1700V 4A TO-247AB | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | Tube | SiC (Silicon Carbide Junction Transistor) | Surface Mount | 175°C (TJ) | Active | D2PAK (7-Lead) | - | 1200V | 1403pF @ 800V | 170W (Tc) | 25A (Tc) | - | 100 mOhm @ 10A | - | - | - | - | ||||
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GeneSiC Semiconductor | TRANS SJT 1200V 25A | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | Tube | SiC (Silicon Carbide Junction Transistor) | Surface Mount | 175°C (TJ) | Active | D2PAK (7-Lead) | - | 1200V | 3091pF @ 800V | 282W (Tc) | 45A (Tc) | - | 60 mOhm @ 20A | - | - | - | - | ||||
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GeneSiC Semiconductor | TRANS SJT 1700V 8A TO-247AB | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | Tube | SiC (Silicon Carbide Junction Transistor) | Surface Mount | 175°C (TJ) | Active | D2PAK (7-Lead) | - | 1200V | - | 106W (Tc) | 15A (Tc) | - | - | - | - | - | - | ||||
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GeneSiC Semiconductor | TRANS SJT 1700V 4A TO-247AB | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | Tube | SiC (Silicon Carbide Junction Transistor) | Surface Mount | 175°C (TJ) | Active | D2PAK (7-Lead) | - | 1200V | 1403pF @ 800V | 170W (Tc) | 25A (Tc) | - | 100 mOhm @ 10A | - | - | - | - | ||||
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GeneSiC Semiconductor | TRANS SJT 1200V 25A | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | Tube | SiC (Silicon Carbide Junction Transistor) | Surface Mount | 175°C (TJ) | Active | D2PAK (7-Lead) | - | 1200V | 3091pF @ 800V | 282W (Tc) | 45A (Tc) | - | 60 mOhm @ 20A | - | - | - | - | ||||
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GeneSiC Semiconductor | TRANS SJT 1700V 8A TO-247AB | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | Tube | SiC (Silicon Carbide Junction Transistor) | Surface Mount | 175°C (TJ) | Active | D2PAK (7-Lead) | - | 1200V | - | 106W (Tc) | 15A (Tc) | - | - | - | - | - | - | ||||
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GeneSiC Semiconductor | TRANS SJT 1700V 4A TO-247AB | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | Tube | SiC (Silicon Carbide Junction Transistor) | Surface Mount | 175°C (TJ) | Active | D2PAK (7-Lead) | - | 1200V | 1403pF @ 800V | 170W (Tc) | 25A (Tc) | - | 100 mOhm @ 10A | - | - | - | - | ||||
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GeneSiC Semiconductor | TRANS SJT 1200V 25A | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | Tube | SiC (Silicon Carbide Junction Transistor) | Surface Mount | 175°C (TJ) | Active | D2PAK (7-Lead) | - | 1200V | 3091pF @ 800V | 282W (Tc) | 45A (Tc) | - | 60 mOhm @ 20A | - | - | - | - | ||||
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GeneSiC Semiconductor | TRANS SJT 1700V 8A TO-247AB | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | Tube | SiC (Silicon Carbide Junction Transistor) | Surface Mount | 175°C (TJ) | Active | D2PAK (7-Lead) | - | 1200V | - | 106W (Tc) | 15A (Tc) | - | - | - | - | - | - | ||||
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GeneSiC Semiconductor | TRANS SJT 1700V 4A TO-247AB | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | Tube | SiC (Silicon Carbide Junction Transistor) | Surface Mount | 175°C (TJ) | Active | D2PAK (7-Lead) | - | 1200V | 1403pF @ 800V | 170W (Tc) | 25A (Tc) | - | 100 mOhm @ 10A | - | - | - | - | ||||
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GeneSiC Semiconductor | TRANS SJT 1200V 25A | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | Tube | SiC (Silicon Carbide Junction Transistor) | Surface Mount | 175°C (TJ) | Active | D2PAK (7-Lead) | - | 1200V | 3091pF @ 800V | 282W (Tc) | 45A (Tc) | - | 60 mOhm @ 20A | - | - | - | - | ||||
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GeneSiC Semiconductor | TRANS SJT 1700V 8A TO-247AB | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | Tube | SiC (Silicon Carbide Junction Transistor) | Surface Mount | 175°C (TJ) | Active | D2PAK (7-Lead) | - | 1200V | - | 106W (Tc) | 15A (Tc) | - | - | - | - | - | - | ||||
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GeneSiC Semiconductor | TRANS SJT 1700V 4A TO-247AB | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | Tube | SiC (Silicon Carbide Junction Transistor) | Surface Mount | 175°C (TJ) | Active | D2PAK (7-Lead) | - | 1200V | 1403pF @ 800V | 170W (Tc) | 25A (Tc) | - | 100 mOhm @ 10A | - | - | - | - | ||||
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GeneSiC Semiconductor | TRANS SJT 1200V 25A | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | Tube | SiC (Silicon Carbide Junction Transistor) | Surface Mount | 175°C (TJ) | Active | D2PAK (7-Lead) | - | 1200V | 3091pF @ 800V | 282W (Tc) | 45A (Tc) | - | 60 mOhm @ 20A | - | - | - | - | ||||
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GeneSiC Semiconductor | TRANS SJT 1700V 8A TO-247AB | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | Tube | SiC (Silicon Carbide Junction Transistor) | Surface Mount | 175°C (TJ) | Active | D2PAK (7-Lead) | - | 1200V | - | 106W (Tc) | 15A (Tc) | - | - | - | - | - | - | ||||
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GeneSiC Semiconductor | TRANS SJT 1700V 4A TO-247AB | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | Tube | SiC (Silicon Carbide Junction Transistor) | Surface Mount | 175°C (TJ) | Active | D2PAK (7-Lead) | - | 1200V | 1403pF @ 800V | 170W (Tc) | 25A (Tc) | - | 100 mOhm @ 10A | - | - | - | - | ||||
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GeneSiC Semiconductor | TRANS SJT 1200V 25A | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | Tube | SiC (Silicon Carbide Junction Transistor) | Surface Mount | 175°C (TJ) | Active | D2PAK (7-Lead) | - | 1200V | 3091pF @ 800V | 282W (Tc) | 45A (Tc) | - | 60 mOhm @ 20A | - | - | - | - | ||||
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GeneSiC Semiconductor | TRANS SJT 1700V 8A TO-247AB | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | Tube | SiC (Silicon Carbide Junction Transistor) | Surface Mount | 175°C (TJ) | Active | D2PAK (7-Lead) | - | 1200V | - | 106W (Tc) | 15A (Tc) | - | - | - | - | - | - | ||||
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Infineon Technologies | MOSFET N-CH 49V 80A TO-220-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TEMPFET® | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | Obsolete | PG-TO220-7-180 | N-Channel | 49V | 4800pF @ 25V | 300W (Tc) | 80A (Tc) | 4.5V, 10V | 6.5 mOhm @ 36A, 10V | 2V @ 240µA | 232nC @ 10V | ±20V | Temperature Sensing Diode | |||||
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Infineon Technologies | MOSFET N-CH 150V 136A TO263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-7 | N-Channel | 150V | 5300pF @ 75V | 250W (Tc) | 136A (Tc) | 8V, 10V | 6 mOhm @ 68A, 10V | 4.6V @ 180µA | 68nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 100V 166A TO263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-7 | N-Channel | 100V | 6970pF @ 50V | 187W (Tc) | 166A (Tc) | 6V, 10V | 3.2 mOhm @ 83A, 10V | 3.8V @ 125µA | 95nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 40V 380A D2PAK-7P | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK (7-Lead) | N-Channel | 40V | 10990pF @ 40V | 380W (Tc) | 240A (Tc) | 4.5V, 10V | 1.4 mOhm @ 200A, 10V | 2.5V @ 250µA | 180nC @ 4.5V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 100V 180A TO263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-7 | N-Channel | 100V | 10200pF @ 50V | 250W (Tc) | 180A (Tc) | 6V, 10V | 2.4 mOhm @ 90A, 10V | 3.8V @ 183µA | 138nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 150V 174A TO263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-7 | N-Channel | 150V | 8000pF @ 75V | 300W (Tc) | 174A (Tc) | 8V, 10V | 4.4 mOhm @ 87A, 10V | 4.6V @ 264µA | 100nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N CH 40V 195A D2PAK-7PIN | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | HEXFET®, StrongIRFET™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK (7-Lead) | N-Channel | 40V | 7437pF @ 25V | 231W (Tc) | 195A (Tc) | 6V, 10V | 1.4 mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 49V 80A TO-220-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TEMPFET® | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | Active | PG-TO263-7-1 | N-Channel | 49V | 4800pF @ 25V | 300W (Tc) | 80A (Tc) | 4.5V, 10V | 6.5 mOhm @ 36A, 10V | 2V @ 240µA | 232nC @ 10V | ±20V | Temperature Sensing Diode | |||||
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Infineon Technologies | MOSFET N-CH 49V 80A TO-220-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TEMPFET® | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | Obsolete | PG-TO220-7-180 | N-Channel | 49V | 4800pF @ 25V | 300W (Tc) | 80A (Tc) | 4.5V, 10V | 6.5 mOhm @ 36A, 10V | 2V @ 240µA | 232nC @ 10V | ±20V | Temperature Sensing Diode |