- Series :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 100V 166A TO263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-7 | N-Channel | 100V | 6970pF @ 50V | 187W (Tc) | 166A (Tc) | 6V, 10V | 3.2 mOhm @ 83A, 10V | 3.8V @ 125µA | 95nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 100V 180A TO263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-7 | N-Channel | 100V | 10200pF @ 50V | 250W (Tc) | 180A (Tc) | 6V, 10V | 2.4 mOhm @ 90A, 10V | 3.8V @ 183µA | 138nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N CH 40V 195A D2PAK-7PIN | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | HEXFET®, StrongIRFET™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK (7-Lead) | N-Channel | 40V | 7437pF @ 25V | 231W (Tc) | 195A (Tc) | 6V, 10V | 1.4 mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | ±20V | - |