- Package / Case :
- Maximum Operating Temperature :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Applied Filters :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 890 W | Dual | 1.2 kV | 1.7 V | 280 A | 500 nA | |||||
|
|
Microsemi | IGBT Modules Power Module - IGBT | SOT-227-4 | + 150 C | 347 W | Single | 1.2 kV | 1.7 V | 75 A | 500 nA | ||||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 260 W | Single | 1.2 kV | 1.7 V | 55 A | 500 nA | |||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SOT-227-4 | + 150 C | Bulk | 416 W | Single | 1.2 kV | 1.7 V | 100 A | 500 nA | ||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 347 W | Single | 1.2 kV | 1.7 V | 75 A | 500 nA | |||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 260 W | Single | 1.2 kV | 1.7 V | 55 A | 500 nA | |||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 890 W | Dual | 1.2 kV | 1.7 V | 280 A | 500 nA | |||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SOT-227-4 | + 150 C | 416 W | Single | 1.2 kV | 1.7 V | 100 A | 500 nA | |||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.15 kW | Full Bridge | 600 V | 1.4 V | 430 A | 500 nA | |||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 890 W | Dual | 1.2 kV | 1.7 V | 280 A | 500 nA | |||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.15 kW | Dual | 600 V | 1.4 V | 430 A | 500 nA | |||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 560 W | Full Bridge | 1.7 kV | 2 V | 150 A | 500 nA | |||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 890 W | Single | 1.2 kV | 1.7 V | 280 A | 500 nA | |||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 890 W | Full Bridge | 1.2 kV | 1.7 V | 280 A | 500 nA | |||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.15 kW | Dual | 600 V | 1.4 V | 430 A | 500 nA | |||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 890 W | Single | 1.2 kV | 1.7 V | 280 A | 500 nA | |||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 100 C | 935 W | Dual | 600 V | 1.5 V | 430 A | 500 nA | |||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1 kW | Full Bridge | 650 V | 1.85 V | 385 A | 500 nA | |||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.15 kW | Dual | 600 V | 1.4 V | 430 A | 500 nA | |||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 560 W | Dual | 1.7 kV | 2 V | 150 A | 500 nA | |||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.15 kW | Single | 600 V | 1.4 V | 430 A | 500 nA | |||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 560 W | 1.7 kV | 2 V | 150 A | 500 nA | ||||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.15 kW | Single | 600 V | 1.4 V | 430 A | 500 nA |