- Maximum Operating Temperature :
- Pd - Power Dissipation :
-
- 1 kW (3)
- 1 kW, 340 W (1)
- 1.041 kW (1)
- 1.05 kW (3)
- 1.15 kW (7)
- 1.25 kW (11)
- 1.38 kW (4)
- 1.4 kW (1)
- 1.45 kW (3)
- 1.47 kW (3)
- 1.5 kW (4)
- 1.66 kW (4)
- 1.75 kW (3)
- 1.785 kW (5)
- 1.9 kW (1)
- 156 W (1)
- 170 W (1)
- 176 W (13)
- 2 kW (1)
- 2.08 kW (4)
- 2.082 kW (1)
- 2.1 kW (1)
- 2.3 kW (5)
- 2.307 kW (1)
- 2.5 kW (1)
- 2.9 kW (1)
- 208 W (3)
- 210 W (4)
- 220 W (4)
- 227 W (1)
- 245 W (1)
- 250 W (18)
- 250 W, 176 W (1)
- 260 W (2)
- 270 W (3)
- 277 W (9)
- 280 W (5)
- 284 W (4)
- 3 kW (3)
- 310 W (1)
- 312 W (11)
- 329 W (2)
- 340 W (12)
- 347 W (2)
- 350 W (4)
- 356 W (1)
- 357 W (7)
- 378 W (2)
- 385 W (8)
- 416 W (4)
- 417 W (1)
- 431 W (2)
- 446 W (2)
- 462 W (2)
- 465 W (1)
- 480 W (17)
- 500 W (3)
- 500 W, 250 W (1)
- 517 W (2)
- 521 W (1)
- 536 W (4)
- 543 W (2)
- 560 W (7)
- 570 W (1)
- 595 W (3)
- 600 W (1)
- 62 W (1)
- 625 W (7)
- 650 W (1)
- 652 W (1)
- 682 W (2)
- 690 W (8)
- 694 W (2)
- 750 W (4)
- 781 W (2)
- 830 W (1)
- 833 W (1)
- 890 W (10)
- 90 W (4)
- 935 W (3)
- 940 W (4)
- 962 W (2)
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Continuous Collector Current at 25 C :
-
- 1 kA (1)
- 1.1 kA (1)
- 100 A (22)
- 110 A (15)
- 112 A (1)
- 117 A (2)
- 118 A (2)
- 120 A (2)
- 123 A (1)
- 128 A (2)
- 130 A (4)
- 135 A (3)
- 140 A (12)
- 148 A (2)
- 149 A (1)
- 150 A (19)
- 150 A, 100 A (1)
- 151 A (2)
- 153 A (2)
- 170 A (3)
- 185 A (1)
- 195 A (1)
- 200 A (1)
- 215 A (2)
- 220 A (14)
- 225 A (8)
- 230 A (1)
- 250 A (4)
- 280 A (6)
- 283 A (2)
- 290 A (7)
- 300 A (4)
- 300 A, 150 A (1)
- 305 A (1)
- 310 A (3)
- 32 A (1)
- 340 A (4)
- 350 A (1)
- 385 A (1)
- 40 A (2)
- 400 A (12)
- 420 A (8)
- 430 A (7)
- 440 A (4)
- 45 A (5)
- 50 A (4)
- 500 A (4)
- 55 A (5)
- 550 A (3)
- 560 A (4)
- 580 A (1)
- 600 A (1)
- 610 A (5)
- 625 A (1)
- 64 A (1)
- 65 A (6)
- 650 A (1)
- 67 A (1)
- 70 A (3)
- 700 A (4)
- 75 A (24)
- 75 A, 80 A (1)
- 770 A (1)
- 80 A (19)
- 800 A (1)
- 84 A (1)
- 840 A (2)
- 86 A (2)
- 87 A (1)
- 900 A (1)
- 910 A (1)
- 93 A (2)
- Gate-Emitter Leakage Current :
- Applied Filters :
0 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 890 W | Dual | 1.2 kV | 1.7 V | 280 A | 500 nA | ||||||
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP-3 | + 175 C | Bulk | 176 W | Hex | 600 V | 1.5 V | 80 A | 600 nA | |||||
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP-1 | + 150 C | 312 W | Single | 1.7 kV | 2 V | 75 A | 400 nA | ||||||
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 340 W | 600 V | 1.5 V | 150 A | 400 nA | |||||||
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SOT-227-4 | + 150 C | 480 W | 1.2 kV | 1.7 V | 140 A | 400 nA | |||||||
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Modules | SOT-227-4 | + 150 C | Bulk | 543 W | 1.2 kV | 3.3 V | 128 A | 100 nA | ||||||
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 208 W | Full Bridge | 1.2 kV | 1.7 V | 55 A | 400 nA | ||||||
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 940 W | Dual | 1.2 kV | 1.8 V | 230 A | 200 nA | ||||||
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP-1 | + 175 C | Bulk | 250 W | Dual | 600 V | 1.5 V | 100 A | 600 nA | |||||
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | ISOTOP-4 | + 175 C | 220 W | Single | 1.2 kV | 1.85 V | 65 A | 400 nA | ||||||
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Carbide Modules | ISOTOP-4 | + 150 C | 480 W | Single | 1.2 kV | 1.7 V | 140 A | 400 nA | ||||||
|
Microsemi | IGBT Modules Power Module - IGBT | SOT-227-4 | + 150 C | 347 W | Single | 1.2 kV | 1.7 V | 75 A | 500 nA | |||||||
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 260 W | Single | 1.2 kV | 1.7 V | 55 A | 500 nA | ||||||
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SOT-227-4 | + 150 C | Bulk | 416 W | Single | 1.2 kV | 1.7 V | 100 A | 500 nA | |||||
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - NPT Med Frequency... | IGBT Silicon Modules | SOT-227-4 | + 150 C | 830 W | 1.2 kV | 3.2 V | 170 A | 900 nA | |||||||
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 347 W | Single | 1.2 kV | 1.7 V | 75 A | 500 nA | ||||||
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 260 W | Single | 1.2 kV | 1.7 V | 55 A | 500 nA | ||||||
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Modules | T-MAX-3 | + 150 C | 1.041 kW | Single | 600 V | 2.2 V | 100 A | +/- 100 nA | ||||||
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - NPT Med Frequency... | IGBT Silicon Carbide Modules | ISOTOP-4 | + 150 C | Bulk | 570 W | Single | 1.2 kV | 3.2 V | 123 A | 600 nA | |||||
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - Power MOS 8 | IGBT Silicon Modules | TO-247-3 | + 150 C | 962 W | Single | 1.2 kV | 3.5 V | 170 A | +/- 250 nA | ||||||
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - Fieldstop Low Freq ... | IGBT Silicon Modules | SOT-227-4 | + 175 C | Bulk | 682 W | 600 V | 1.5 V | 283 A | 600 nA | ||||||
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - Fieldstop Low Freq ... | IGBT Silicon Modules | SOT-227-4 | + 150 C | Bulk | 625 W | 1.2 kV | 1.7 V | 215 A | 600 nA | ||||||
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 462 W | Single | 600 V | 2.2 V | 151 A | +/- 100 nA | ||||||
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 284 W | Single | 600 V | 2.2 V | 86 A | +/- 100 nA | ||||||
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - Power MOS 8 | IGBT Silicon Modules | TO-247-3 | + 150 C | 694 W | Single | 1.2 kV | 3.5 V | 117 A | +/- 250 nA | ||||||
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 431 W | Single | 600 V | 2.2 V | 130 A | +/- 100 nA | ||||||
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - Power MOS 8 | IGBT Silicon Modules | TO-264-3 | + 150 C | 694 W | Single | 1.2 kV | 3.5 V | 117 A | +/- 250 nA | ||||||
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - NPT Low Frequency... | IGBT Silicon Carbide Modules | ISOTOP-4 | + 150 C | Bulk | 625 W | Single | 1.2 kV | 2.5 V | 149 A | +/- 100 nA | |||||
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 329 W | Single | 600 V | 2.2 V | 100 A | +/- 100 nA | ||||||
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - Fieldstop Low Freq ... | IGBT Silicon Modules | SOT-227-4 | + 150 C | Bulk | 446 W | 1.2 kV | 1.7 V | 153 A | 600 nA |