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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP-3 | + 175 C | 340 W | 600 V | 1.5 V | 150 A | 400 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP2 | + 100 C | 227 W | 1.2 kV | 2.1 V | 40 A | 150 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP-3 | + 150 C | 250 W | 600 V | 2.1 V | 65 A | 400 nA |