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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6-P | + 100 C | 350 W | 3-Phase | 1.2 kV | 1.7 V | 100 A | 400 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6-P | + 100 C | 350 W | Triple Dual Common Source | 1.2 kV | 1.7 V | 100 A | 400 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 125 C | 350 W | Dual | 1.2 kV | 1.7 V | 100 A | 400 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP1-12 | + 125 C | 350 W | Dual | 650 V | 1.85 V | 135 A | 150 nA |