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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Infineon Technologies | IGBT Modules N-CH 1.2KV 105A | IGBT Silicon Modules | Econo 2 | + 125 C | 355 W | Hex | 1200 V | 2.15 V | 105 A | 400 nA | |||||
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Infineon Technologies | IGBT Modules N-CH 1.2KV 105A | IGBT Silicon Modules | Econo 3 | + 125 C | 355 W | Hex | 1200 V | 2.15 V | 105 A | 400 nA | |||||
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Littelfuse | IGBT Modules 1200V 75A IGBT | IGBT Silicon Modules | Package W | + 125 C | Bulk | 368 W | 3-Phase Inverter | 1200 V | 1.9 V | 105 A | 400 nA | ||||
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Littelfuse | IGBT Modules 1200V 75A IGBT | IGBT Silicon Modules | Package H | + 125 C | Bulk | 348 W | 3-Phase Inverter | 1200 V | 1.9 V | 105 A | 400 nA | ||||
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Littelfuse | IGBT Modules 1200V 75A IGBT | IGBT Silicon Modules | Package W | + 125 C | Bulk | 348 W | 3-Phase Converter Brake Inverter | 1200 V | 1.9 V | 105 A | 400 nA | ||||
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Littelfuse | IGBT Modules 1200V 75A Dual | IGBT Silicon Modules | Package S | + 150 C | Bulk | 630 W | Dual | 1200 V | 1.8 V | 105 A | 100 nA | ||||
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Infineon Technologies | IGBT Modules 1200V 75A CHOPPER | IGBT Silicon Modules | Half Bridge GAL 1 | + 150 C | Tray | 625 W | Half Bridge | 1200 V | 2.5 V | 105 A | 400 nA | ||||
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Infineon Technologies | IGBT Modules 1200V 75A PIM | IGBT Silicon Modules | EconoPIM3 | + 125 C | 350 W | Hex | 1200 V | 2.15 V | 105 A | 400 nA | |||||
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Infineon Technologies | IGBT Modules 1200V 75A 3-PHASE | IGBT Silicon Modules | EconoPACK 3B | + 125 C | 355 W | Hex | 1200 V | 1.7 V | 105 A | 400 nA | |||||
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Infineon Technologies | IGBT Modules 1200V 75A 3-PHASE | IGBT Silicon Modules | EconoPACK 2 | + 125 C | 350 W | Hex | 1200 V | 1.7 V | 105 A | 400 nA | |||||
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Vishay | IGBT Modules Output & SW Modules - IAP IGBT | + 150 C | 500 W | Half Bridge | 1.2 kV | 3.2 V | 105 A | 400 nA | |||||||
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Infineon Technologies | IGBT Modules 1200V 75A DUAL | IGBT Silicon Modules | Half Bridge1 | + 150 C | 625 W | Half Bridge | 1200 V | 2.5 V | 105 A | 320 nA |