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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Infineon Technologies | IGBT Modules N-CH 1.2KV 105A | IGBT Silicon Modules | Econo 2 | + 125 C | 355 W | Hex | 1200 V | 2.15 V | 105 A | 400 nA | ||||
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Infineon Technologies | IGBT Modules N-CH 1.2KV 105A | IGBT Silicon Modules | Econo 3 | + 125 C | 355 W | Hex | 1200 V | 2.15 V | 105 A | 400 nA | ||||
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Infineon Technologies | IGBT Modules 1200V 75A PIM | IGBT Silicon Modules | EconoPIM3 | + 125 C | 350 W | Hex | 1200 V | 2.15 V | 105 A | 400 nA | ||||
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Infineon Technologies | IGBT Modules 1200V 75A 3-PHASE | IGBT Silicon Modules | EconoPACK 3B | + 125 C | 355 W | Hex | 1200 V | 1.7 V | 105 A | 400 nA | ||||
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Infineon Technologies | IGBT Modules 1200V 75A 3-PHASE | IGBT Silicon Modules | EconoPACK 2 | + 125 C | 350 W | Hex | 1200 V | 1.7 V | 105 A | 400 nA |