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0 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Infineon Technologies | IGBT Modules 1200V 150A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 1.25 kW | Dual | 1200 V | 3.2 V | 225 A | 400 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.25 kW | Dual | 600 V | 1.5 V | 500 A | 400 nA | ||||
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Infineon Technologies | IGBT Modules 600V 300A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 1.25 kW | Dual | 600 V | 1.95 V | 375 A | 400 nA | ||||
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Infineon Technologies | IGBT Modules 1200V 150A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 1.25 kW | Dual | 1200 V | 2.1 V | 300 A | 400 nA | ||||
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Infineon Technologies | IGBT Modules 1700V 150A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 1.25 kW | Dual | 1700 V | 2.6 V | 300 A | 200 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.25 kW | Dual | 1.7 kV | 2 V | 310 A | 400 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | LP8 | + 85 C | 1.25 kW | Dual | 600 V | 1.5 V | 600 A | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.25 kW | Dual | 1.7 kV | 2 V | 340 A | 600 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.25 kW | Single | 1.7 kV | 2 V | 310 A | 400 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.25 kW | Single | 1.7 kV | 2 V | 340 A | 600 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.25 kW | Single | 600 V | 1.5 V | 500 A | 400 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.25 kW | Single | 1.7 kV | 2 V | 340 A | 600 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.25 kW | Dual | 1.7 kV | 2 V | 340 A | 600 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.25 kW | Single | 1.7 kV | 2 V | 310 A | 400 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.25 kW | Single | 600 V | 1.5 V | 500 A | 400 nA | ||||
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Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 175 C | 1.25 kW | Half Bridge | 600 V | 1.72 V | 379 A | +/- 500 nA | ||||||
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Infineon Technologies | IGBT Modules 1200V 150A DUAL | IGBT Silicon Modules | Half Bridge2 | + 150 C | 1.25 kW | Half Bridge | 1200 V | 2.5 V | 210 A | 320 nA |