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Package / Case :
Maximum Operating Temperature :
Configuration :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Package / Case Maximum Operating Temperature Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current
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Per Unit
$212.2900
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules D3-11 + 125 C 1.25 kW Dual 1.7 kV 2 V 310 A 400 nA
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Per Unit
$246.7700
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP6 + 100 C 1.25 kW Dual 1.7 kV 2 V 340 A 600 nA
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Per Unit
$141.4300
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules D3-11 + 125 C 1.25 kW Single 1.7 kV 2 V 310 A 400 nA
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Per Unit
$164.4100
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP6 + 100 C 1.25 kW Single 1.7 kV 2 V 340 A 600 nA
Default Photo
Per Unit
$164.4100
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP6 + 100 C 1.25 kW Single 1.7 kV 2 V 340 A 600 nA
Default Photo
Per Unit
$246.7700
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP6 + 100 C 1.25 kW Dual 1.7 kV 2 V 340 A 600 nA
Default Photo
Per Unit
$141.4300
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules D3-11 + 125 C 1.25 kW Single 1.7 kV 2 V 310 A 400 nA
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