- Package / Case :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Infineon Technologies | IGBT Modules HYBRID PACK1 | IGBT Silicon Modules | HybridPack1 | + 150 C | 1250 W | 3-Phase | 650 V | 1.7 V | 500 A | 400 nA | ||||
|
|
Infineon Technologies | IGBT Modules IGBT Module 200A 1700V | IGBT Silicon Modules | 62 mm | + 150 C | 1250 W | Dual | 1700 V | 2.45 V | 310 A | 100 nA | ||||
|
|
|
Infineon Technologies | IGBT Modules | IGBT Silicon Modules | HybridPack1 | + 150 C | 1250 W | 3-Phase | 650 V | 1.7 V | 500 A | 400 nA | ||||
|
|
Infineon Technologies | IGBT Modules IGBT Module 400A 650V | IGBT Silicon Modules | Module | + 150 C | 1250 W | IGBT-Inverter | 650 V | 1.55 V | 485 A | 400 nA | ||||
|
|
Infineon Technologies | IGBT Modules HYBRID PACK2 | IGBT Silicon Modules | HybridPack2 | + 150 C | 1250 W | 3-Phase | 650 V | 1.4 V | 530 A | 400 nA |