Chat with us, powered by LiveChat
Build a global manufacturer and supplier trusted trading platform.
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
8 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXGH48N60B3D1
Per Unit
$6.7400
RFQ
IXYS IGBT Transistors 75 Amps 600V 1.05 V Rds Through Hole TO-247-3 + 150 C Tube 300 W Single 600 V 1.8 V   100 nA +/- 20 V
IXYH75N65C3H1
Per Unit
$11.3400
RFQ
IXYS IGBT Transistors 650V/170A XPT C3-Class TO-247 Through Hole TO-247-3 + 175 C Tube 750 W Single 650 V 1.8 V 170 A 100 nA 30 V
IXA45IF1200HB
Per Unit
$10.4500
RFQ
IXYS IGBT Transistors N-Channel: Power MOSFET w/Fast Diode Through Hole TO-247-3 + 150 C Tube 325 W Single 1200 V 1.8 V 78 A 500 nA 20 V
IXA33IF1200HB
Per Unit
$8.7800
RFQ
IXYS IGBT Transistors XPT IGBT Copack Through Hole TO-247-3 + 150 C Tube 250 W Single 1200 V 1.8 V 58 A 500 nA 20 V
IXA12IF1200HB
Per Unit
$4.9800
RFQ
IXYS IGBT Transistors XPT IGBT Copack Through Hole TO-247-3 + 150 C Tube 85 W Single 1200 V 1.8 V 20 A 500 nA 20 V
IXA20IF1200HB
Per Unit
$6.5700
RFQ
IXYS IGBT Transistors XPT IGBT Copack Through Hole TO-247-3 + 150 C Tube 165 W Single 1200 V 1.8 V 38 A 500 nA 20 V
IXYH75N65C3
Per Unit
$6.6700
RFQ
IXYS IGBT Transistors 650V/170A XPT C3-Class TO-247 Through Hole TO-247-3 + 175 C Tube 750 W Single 650 V 1.8 V 170 A 100 nA 30 V
IXGH48N60B3C1
Per Unit
$24.4400
RFQ
IXYS IGBT Transistors G-SERIES GENX3SIC IGBT 600V 48A Through Hole TO-247-3 + 150 C Tube 300 W   600 V 1.8 V 75 A 100 nA +/- 20 V
Page 1 / 1