- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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IXYS | IGBT Transistors 75 Amps 600V 1.05 V Rds | Through Hole | TO-247-3 | + 150 C | Tube | 300 W | Single | 600 V | 1.8 V | 100 nA | +/- 20 V | ||||||
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IXYS | IGBT Transistors 650V/170A XPT C3-Class TO-247 | Through Hole | TO-247-3 | + 175 C | Tube | 750 W | Single | 650 V | 1.8 V | 170 A | 100 nA | 30 V | |||||
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IXYS | IGBT Transistors N-Channel: Power MOSFET w/Fast Diode | Through Hole | TO-247-3 | + 150 C | Tube | 325 W | Single | 1200 V | 1.8 V | 78 A | 500 nA | 20 V | |||||
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IXYS | IGBT Transistors XPT IGBT Copack | Through Hole | TO-247-3 | + 150 C | Tube | 250 W | Single | 1200 V | 1.8 V | 58 A | 500 nA | 20 V | |||||
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IXYS | IGBT Transistors XPT IGBT Copack | Through Hole | TO-247-3 | + 150 C | Tube | 85 W | Single | 1200 V | 1.8 V | 20 A | 500 nA | 20 V | |||||
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IXYS | IGBT Transistors XPT IGBT Copack | Through Hole | TO-247-3 | + 150 C | Tube | 165 W | Single | 1200 V | 1.8 V | 38 A | 500 nA | 20 V | |||||
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IXYS | IGBT Transistors 650V/170A XPT C3-Class TO-247 | Through Hole | TO-247-3 | + 175 C | Tube | 750 W | Single | 650 V | 1.8 V | 170 A | 100 nA | 30 V | |||||
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IXYS | IGBT Transistors G-SERIES GENX3SIC IGBT 600V 48A | Through Hole | TO-247-3 | + 150 C | Tube | 300 W | 600 V | 1.8 V | 75 A | 100 nA | +/- 20 V |