2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Fairchild Semiconductor | IGBT Transistors HIGH POWER | Through Hole | TO-264-3 | + 150 C | Tube | 180 W | Single | 1000 V | 1.5 V | 60 A | +/- 500 nA | +/- 25 V | ||||
|
|
|
Fairchild Semiconductor | IGBT Transistors HIGH POWER | Through Hole | TO-264-3 | + 150 C | Tube | 180 W | Single | 1000 V | 1.5 V | 60 A | +/- 500 nA | +/- 25 V |