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7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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Fairchild Semiconductor | IGBT Transistors 1250V 20A Shorted Anode IGBT | Through Hole | TO-3 | + 175 C | Tube | 250 W | Single | 1.25 kV | 2 V | 40 A | +/- 500 nA | +/- 25 V | |||||
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Fairchild Semiconductor | IGBT Transistors 600V 4 0A UFD | Through Hole | TO-3P-3 | + 150 C | Tube | 156 W | Single | 1000 V | 2.5 V | +/- 500 nA | +/- 25 V | ||||||
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Fairchild Semiconductor | IGBT Transistors 1500V 30A FS SA Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 500 W | Single | 1.5 kV | 2.15 V | 60 A | +/- 500 nA | +/- 25 V | |||||
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Vishay Semiconductors | IGBT Transistors Ic 300A Vce(On)1.30V Half Brdge Trench PT | Chassis | DIAP | + 150 C | 1.136 kW | Dual | 600 V | - | 580 A | +/- 500 nA | 20 V | ||||||
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Vishay Semiconductors | IGBT Transistors Ic 100A Vce(On)1.16V Half Brdge Trench PT | Chassis | + 150 C | 781 W | Dual | 600 V | - | 337 A | +/- 500 nA | 20 V | |||||||
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Fairchild Semiconductor | IGBT Transistors HIGH POWER | Through Hole | TO-264-3 | + 150 C | Tube | 180 W | Single | 1000 V | 1.5 V | 60 A | +/- 500 nA | +/- 25 V | |||||
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Fairchild Semiconductor | IGBT Transistors HIGH POWER | Through Hole | TO-264-3 | + 150 C | Tube | 180 W | Single | 1000 V | 1.5 V | 60 A | +/- 500 nA | +/- 25 V |