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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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Vishay Semiconductors | IGBT Transistors Ic 300A Vce(On)1.30V Half Brdge Trench PT | Chassis | DIAP | + 150 C | 1.136 kW | Dual | 600 V | - | 580 A | +/- 500 nA | 20 V | ||||
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Vishay Semiconductors | IGBT Transistors Ic 100A Vce(On)1.16V Half Brdge Trench PT | Chassis | + 150 C | 781 W | Dual | 600 V | - | 337 A | +/- 500 nA | 20 V |