- Manufacture :
- Maximum Operating Temperature :
- Maximum Gate Emitter Voltage :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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Infineon Technologies | IGBT Transistors Trenchstop 5 IGBT | Through Hole | TO-247-3 | + 175 C | 188 W | 650 V | 1.35 V | 100 nA | +/- 20 | ||||||||
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS TrenchStop 5 | Through Hole | TO-247-3 | + 175 C | Tube | 230 W | Single | 650 V | 1.35 V | 80 A | 100 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS TrenchStop 5 | Through Hole | TO-247-3 | + 175 C | Tube | 150 W | Single | 650 V | 1.35 V | 40 A | 100 nA | 20 V | |||||
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IXYS | IGBT Transistors 72 Amps 600V 1.35 Rds | Through Hole | TO-247-3 | + 150 C | Tube | 540 W | Single | 600 V | 1.35 V | 75 A | 100 nA | +/- 20 V | |||||
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Infineon Technologies | IGBT Transistors Trenchstop 5 IGBT | Through Hole | TO-247-3 | + 175 C | 230 W | 650 V | 1.35 V | 100 nA | +/- 20 | ||||||||
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Infineon Technologies | IGBT Transistors Trenchstop 5 IGBT | Through Hole | TO-247-3 | + 175 C | 274 W | 650 V | 1.35 V | 100 nA | +/- 20 |