- Maximum Gate Emitter Voltage :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Infineon Technologies | IGBT Transistors IGBT PRODUCTS TrenchStop 5 | Through Hole | TO-247-3 | + 175 C | Tube | 230 W | Single | 650 V | 1.35 V | 80 A | 100 nA | 20 V | ||||
|
|
Infineon Technologies | IGBT Transistors Trenchstop 5 IGBT | Through Hole | TO-247-3 | + 175 C | 230 W | 650 V | 1.35 V | 100 nA | +/- 20 |