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7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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IXYS | IGBT Transistors 1700V 75A | Through Hole | TO-247-3 | + 150 C | Tube | 360 W | Single | 1700 V | 20 V | ||||||||
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IXYS | IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 52A | SMD/SMT | SOT-227B-4 | + 150 C | Tube | 360 W | 600 V | 2.1 V | 78 A | 100 nA | +/- 20 V | ||||||
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STMicroelectronics | IGBT Transistors 60A 650V Field Stop Trench Gate IBGT | SMD/SMT | TO-247 | Tube | 360 W | 650 V | 1.9 V | 120 A | 250 nA | 20 V | |||||||
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IXYS | IGBT Transistors 72 Amps 600V | SMD/SMT | SOT-227B-4 | + 150 C | Tube | 360 W | Single | 600 V | 1.35 V | 160 A | 100 nA | +/- 20 V | |||||
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IXYS | IGBT Transistors SGL IGBT 1200V, 80A | Through Hole | TO-247-3 | + 150 C | Tube | 360 W | Single | 1.2 kV | 2 V | 75 A | 100 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT | Through Hole | TO-247 | Tube | 360 W | 650 V | 2.1 V | 120 A | 20 V | ||||||||
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STMicroelectronics | IGBT Transistors 50A 600V FST IGBT Ultrafast Diode | Through Hole | TO-247 | + 150 C | Tube | 360 W | 1.8 V | 100 A | 250 nA | +/- 20 V |