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Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXBH42N170
Per Unit
$19.7900
RFQ
IXYS IGBT Transistors 1700V 75A Through Hole TO-247-3 + 150 C Tube 360 W Single 1700 V       20 V
IXGN72N60C3H1
Per Unit
$24.0300
RFQ
IXYS IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 52A SMD/SMT SOT-227B-4 + 150 C Tube 360 W   600 V 2.1 V 78 A 100 nA +/- 20 V
STGW60H65DRF
Per Unit
$8.9500
RFQ
STMicroelectronics IGBT Transistors 60A 650V Field Stop Trench Gate IBGT SMD/SMT TO-247   Tube 360 W   650 V 1.9 V 120 A 250 nA 20 V
IXGN72N60A3
Per Unit
$19.8900
RFQ
IXYS IGBT Transistors 72 Amps 600V SMD/SMT SOT-227B-4 + 150 C Tube 360 W Single 600 V 1.35 V 160 A 100 nA +/- 20 V
IXGH40N120A2
Per Unit
$11.6100
RFQ
IXYS IGBT Transistors SGL IGBT 1200V, 80A Through Hole TO-247-3 + 150 C Tube 360 W Single 1.2 kV 2 V 75 A 100 nA +/- 20 V
STGW60H65DF
Per Unit
$5.8500
RFQ
STMicroelectronics IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT Through Hole TO-247   Tube 360 W   650 V 2.1 V 120 A   20 V
STGW50H60DF
Per Unit
$4.6800
RFQ
STMicroelectronics IGBT Transistors 50A 600V FST IGBT Ultrafast Diode Through Hole TO-247 + 150 C Tube 360 W     1.8 V 100 A 250 nA +/- 20 V
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