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- Mounting Style :
- Package / Case :
- Maximum Gate Emitter Voltage :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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IXYS | IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 52A | SMD/SMT | SOT-227B-4 | + 150 C | Tube | 360 W | 600 V | 2.1 V | 78 A | 100 nA | +/- 20 V | ||||
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STMicroelectronics | IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT | Through Hole | TO-247 | Tube | 360 W | 650 V | 2.1 V | 120 A | 20 V |