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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | |
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Qorvo | RF JFET Transistors DC-20GHz NF 1.4dB Gain 12dB P1dB 28dBm | SMD/SMT | + 150 C | Gel Pack | 2.1 W | GaAs | 8 V | 194 mA | - 3 V | 12 dB | pHEMT | ||||||
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Broadcom / Avago | RF JFET Transistors Transistor GaAs High Frequency | SMD/SMT | SOT-363 | + 150 C | Bulk | 180 mW | GaAs | 3 V | 40 mA | - 3 V | 10 dB | pHEMT | |||||
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Broadcom / Avago | RF JFET Transistors Transistor GaAs High Frequency | SMD/SMT | SOT-363 | + 150 C | Reel | 180 mW | GaAs | 3 V | 40 mA | - 3 V | 10 dB | pHEMT | |||||
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Broadcom / Avago | RF JFET Transistors Transistor GaAs High Frequency | SMD/SMT | SOT-363 | + 150 C | Reel | 180 mW | GaAs | 3 V | 40 mA | - 3 V | 10 dB | pHEMT | |||||
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CEL | RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET | SMD/SMT | FTSMM-4 (M04) | + 150 C | Reel | 175 mW | GaAs | N-Channel | 4 V | 120 mA | - 3 V | 14 dB | HFET |