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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | |
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CEL | RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET | SMD/SMT | FTSMM-4 (M04) | + 150 C | Reel | 175 mW | GaAs | N-Channel | 4 V | 120 mA | - 3 V | 14 dB | HFET |