PART NO.	PRICE	QUANTITY		MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Output Power	Pd - Power Dissipation	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Vgs - Gate-Source Breakdown Voltage	Gain	Transistor Type	Maximum Drain Gate Voltage
TGF2965-SM	Per Unit $45.0000	Send RFQ	PDF RFQ	Qorvo	RF JFET Transistors 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V	SMD/SMT	QFN-16	-	Tray	6 W	7.5 W	GaN SiC	P-Channel	32 V	600 mA	- 2.7 V	18 dB	HEMT	-
TGF2977-SM	Per Unit $24.1500	Send RFQ	PDF RFQ	Qorvo	RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB	SMD/SMT	QFN-16	+ 225 C	Tray	6 W	8.4 W	GaN SiC	N-Channel	32 V	326 mA	- 2.7 V	13 dB	HEMT
TGF3015-SM	Per Unit $58.0000	Send RFQ	PDF RFQ	Qorvo	RF JFET Transistors .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN	SMD/SMT	QFN-EP-16		Tray	11 W	15.3 W	GaN SiC	N-Channel	32 V	557 mA	- 2.7 V	17.1 dB	HEMT
TGF2979-SM	Per Unit $77.5000	Send RFQ	PDF RFQ	Qorvo	RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB	SMD/SMT	QFN-20	+ 225 C	Tray	22 W	49 W	GaN SiC	N-Channel	32 V	1.8 A	- 2.7 V	11 dB	HEMT
T1G3000532-SM	Per Unit $68.0000	Send RFQ	PDF RFQ	Qorvo	RF JFET Transistors .03-3.5GHz PAE 64.7% P3dB 5.7W @3GHz 32V	SMD/SMT	QFN-32		Tray	5.7 W	9.1 W	GaN SiC	N-Channel	32 V	0.6 A	- 2.7 V	15.7 dB	HEMT
TGF2978-SM	Per Unit $62.0000	Send RFQ	PDF RFQ	Qorvo	RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB	SMD/SMT	QFN-20	+ 225 C	Tray	19 W	33 W	GaN SiC	N-Channel	32 V	1.3 A	- 2.7 V	11 dB	HEMT