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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Packaging Output Power Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type
TGF3015-SM
Per Unit
$58.0000
RFQ
Qorvo RF JFET Transistors .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN SMD/SMT QFN-EP-16 Tray 11 W 15.3 W GaN SiC N-Channel 32 V 557 mA - 2.7 V 17.1 dB HEMT
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