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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | |
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NXP Semiconductors | RF JFET Transistors Broadband RF power GaN HEMT | SMD/SMT | SOT1227B | + 150 C | Tube | GaN Si | N-Channel | 150 V | 5.1 A | 3 V | 13 dB | HEMT |