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8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | |
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MACOM | RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT | Screw | + 85 C | Tray | 100 W | GaN Si | N-Channel | 160 V | 24 mA | 3 V | 21 dB | HEMT | |||||||
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MACOM | RF JFET Transistors DC-2.5GHz 45W Gain 16.5dB GaN HEMT | Screw | TO-272 | + 85 C | Tray | 45 W | GaN Si | N-Channel | 160 V | 14 mA | 3 V | 14.2 dB | HEMT | ||||||
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MACOM | RF JFET Transistors DC-6.0GHz 5W Gain 16dB GaN HEMT | SMD/SMT | SOIC | + 200 C | Tray | 11.6 W | GaN Si | N-Channel | 100 V | 2 mA | 3 mA | 16 dB | HEMT | ||||||
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MACOM | RF JFET Transistors 2.1-2.7GHz 125W Gain 16.5dB GaN | Bulk | GaN Si | ||||||||||||||||
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MACOM | RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN | Screw | + 200 C | Tray | 44 W | GaN Si | N-Channel | 100 V | 4 mA | 3 V | 13 dB | HEMT | |||||||
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NXP Semiconductors | RF JFET Transistors Broadband RF power GaN HEMT | SMD/SMT | SOT1227B | + 150 C | Tube | GaN Si | N-Channel | 150 V | 5.1 A | 3 V | 13 dB | HEMT | |||||||
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MACOM | RF JFET Transistors DC-2.0GHz P1dB 49dBm Gain 19.7dB GaN | Tray | GaN Si | ||||||||||||||||
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MACOM | RF JFET Transistors DC-4.0GHz 25W Gain 13.5dB GaN HEMT | Tray | GaN Si |