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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | |
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MACOM | RF JFET Transistors DC-6.0GHz 5W Gain 16dB GaN HEMT | SMD/SMT | SOIC | + 200 C | Tray | 11.6 W | GaN Si | N-Channel | 100 V | 2 mA | 3 mA | 16 dB | HEMT | ||||
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NXP Semiconductors | RF JFET Transistors Broadband RF power GaN HEMT | SMD/SMT | SOT1227B | + 150 C | Tube | GaN Si | N-Channel | 150 V | 5.1 A | 3 V | 13 dB | HEMT |