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Pd - Power Dissipation :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs - Gate-Source Breakdown Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type
CGHV1J070D
Per Unit
$78.6300
RFQ
Wolfspeed / Cree RF JFET Transistors GaN HEMT Die DC-18GHz, 70 Watt SMD/SMT Die + 225 C Gel Pack 70 W   GaN SiC N-Channel 100 V 6 A - 10 V to + 2 V 17 dB HEMT
TGF2977-SM
Per Unit
$24.1500
RFQ
Qorvo RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB SMD/SMT QFN-16 + 225 C Tray 6 W 8.4 W GaN SiC N-Channel 32 V 326 mA - 2.7 V 13 dB HEMT
TGF2979-SM
Per Unit
$77.5000
RFQ
Qorvo RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB SMD/SMT QFN-20 + 225 C Tray 22 W 49 W GaN SiC N-Channel 32 V 1.8 A - 2.7 V 11 dB HEMT
TGF2978-SM
Per Unit
$62.0000
RFQ
Qorvo RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB SMD/SMT QFN-20 + 225 C Tray 19 W 33 W GaN SiC N-Channel 32 V 1.3 A - 2.7 V 11 dB HEMT
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