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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type
TGF2977-SM
Per Unit
$24.1500
RFQ
Qorvo RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB SMD/SMT QFN-16 + 225 C Tray 6 W 8.4 W GaN SiC N-Channel 32 V 326 mA - 2.7 V 13 dB HEMT
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